Behind the mmWave Performance, What Makes mmTron Unique?

Steven Layton. mmTron VP of Sales, standing before a graphic of the earth showing network connections.

mmTron’s leadership in developing high power, high linearity, and high efficiency mmWave RFICs is well recognized. Beyond the design skills that yield such impressive performance, what makes mmTron a compelling partner?

In this video, our VP of Sales, Steven Layton, outlines mmTron’s whole package: process technology, product performance, quality, and operations.

Since launching in 2020, mmTron has developed more than 47 products providing multiple circuit functions. mmTron’s high power, high linearity, and high efficiency mmWave power amplifiers lead the product portfolio, offering network operators the ability to extend the reach and data rates of fixed wireless access (FWA) and satellite communications (Satcom) systems.


We appreciate the video production skills of Chris Sheppard, Content Source

New Product: Single-Chip Front-End Module Covers 24–30 GHz

Block diagram of the TMC252 with the text "Announcing a front-end RFIC for FWA. 5G, and Satcom. TMC252"

mmTron has developed its first single-chip front-end IC for mmWave communications. Covering 24 to 30 GHz, the TMC252 integrates a power amplifier (PA), low noise amplifier (LNA), and transmit-receive (T/R) switch on a single GaN IC that is available as a die or packaged in a 5 mm x 5 mm air-cavity QFN.

The TMC252 is well-suited for fixed wireless access, 5G infrastructure, point-to-point radio, and satellite communications (Satcom). Its broadband performance covers several FR2, radio, and Satcom bands.

Tx Performance

In transmit mode, at 27 GHz the TMC252 provides 38 dBm saturated output power, 37 dBm at 1 dB compression, and 42 dBm OIP3. At saturated output, the power-added efficiency (PAE) is 22%. Small-signal gain is 22 dB. Biased at 23 V on the drain and –3.8 V on the gate, the quiescent current is 590 mA.

TMC252 measured on-wafer output power with 18 dBm drive at 24, 27, and 30 GHz.
TMC252 Tx path measured on-wafer output power with 18 dBm drive at 24, 27, and 30 GHz.

Rx Performance

In receive mode, at 27 GHz the TMC252 provides 19 dB gain with 5 dB noise figure. The output power at 1 dB compression is 25 dBm and OIP3 is 29 dBm. The recommended drain bias is also 23 V, and the current drain is 60 mA with –4.5 V on the gate.

TMC252 receive path measured on-wafer noise figure from 23 to 31 GHz.
TMC252 receive path measured on-wafer noise figure from 23 to 31 GHz.

T/R Switching

The single pole, double throw GaN switch routes the transmit signal from the PA to a common port, typically connected to an antenna, or the receive signal from the common port to the LNA. It is switched with 0 or 23 V; no negative voltage is required to control the switch.

The TMC252 is available as a die (designated TMC252D) which measures 3 mm x 3 mm x 0.1 mm. It is also available packaged in a 5 mm x 5 mm air-cavity QFN.

The datasheet for the TMC252 may be downloaded here.

PA and Driver for FWA, 5G Infrastructure, and Satcom

To extend the reach of high data rate radios operating in the frequency bands between 24 and 30 GHz, mmTron has developed a linear power amplifier (PA) and companion driver, both fabricated with a high linearity, high reliability GaN process.

TMC254 24–30 GHz PA

Small-signal performance of the TMC254D measured on-wafer.

The TMC254 PA delivers 39 dBm saturated output power with 29.5% power-added efficiency (PAE). P1dB is 38 dBm and OIP3 is 44 dBm. Linear gain is 24 dB.

The 24 to 30 GHz bandwidth of the PA supports high data rate applications like fixed wireless access (FWA), 5G infrastructure, Satcom, and supporting test and measurement systems. The linearity of the PA enables system designers to extend the reach and/or the data rates of their radio links.

The TMC254 is typically biased with 28 V on the drain and –3.8 V on the gate, drawing 588 mA quiescent current.

The PA is available as a die (TMC254D) or packaged in a 5 mm x 5 mm air-cavity QFN (TMC254). The die size is 3.0 mm x 3.0 mm, and the IC’s thickness is 0.1 mm. Bond pad and backside metallization are Au-based to ensure compatibility with wire bonding and high conductivity epoxy or eutectic die attach.

Download the TMC254 data sheet here.

TMC248 22–30 GHz Driver

Small-signal performance of the TMC248D measured on-wafer.

The companion TMC248 driver amplifier covers 22 to 30 GHz and provides 20 dB small-signal gain, 27 dBm saturated output power, 26 dBm output at P1dB, and 30 dBm OIP3.

The output power of the TMC248 is more than sufficient to drive the TMC254 to its saturated output without degrading the linearity of the signal chain. The driver can also be used as the PA in lower power systems.

Like the PA, the driver is typically biased at 23 V on the drain and draws 60 mA quiescent current at –4.5 V gate bias.

Available as die (TMC248D), the size of the IC is 3.0 mm x 3.0 mm, and the IC’s thickness is 0.1 mm. Bond pad and backside metallization are Au-based.

Download the TMC248 data sheet here.

The Latest Disruptive PA in Our Satcom Portfolio

The image summarizes the key performance parameters of the TMC215 and includes a plot of the measure P1dB, and associated PAE and gain.

We’re pleased to announce the latest disruptive power amplifier (PA) in our satellite communications portfolio:

Designed for the Ka-Band satellite uplink band, the TMC215 PA provides 45 W output power at P1dB with 24% power-added efficiency (PAE) across 27 to 31 GHz. The three-stage GaN MMIC delivers >20 W of linear power with 19 dBc noise power ratio (NPR). The design has 23 dB small-signal gain and is well-matched to 50 Ω.

With a wide operating bandwidth, from 26 to 32 GHz, the TMC215 is also useful for fixed wireless access links, 5G infrastructure, and test instrumentation.

The recommended drain bias is 28 V and 3 A current, although the bias can be reduced to 18 V while maintaining 25 W output power with good PAE and linearity.

The TMC215 is available as die (5 mm x 4 mm x 0.1 mm) for integration in a multi-chip module, with on-chip DC blocking capacitors at input and output and built-in ESD protection.

The bond pad and backside metallization are Au-based, ensuring compatibility with standard wire bonding and die attach methods.

An assembled evaluation module is available to help potential customers evaluate the PA.

Review the performance specs here.