Production Order for mmWave Power Amplifiers for 5G FWA

mmTron has secured a design win and accompanying production order for mmWave power amplifier MMICs, to be used for mmWave 5G fixed wireless access (FWA). mmTron’s customer will supply the FWA product to a leading U.S. mobile network operator, who will deploy them to extend its 5G network for broadband internet access.

“mmTron was chosen for this design because our MMICs achieve the best combined output power, linearity, and efficiency — the three key requirements for FWA,” said Seyed Tabatabaei, founder and CEO of mmTron. “Power sets the wireless range, linearity determines the maximum data rate, and efficiency drives the thermal design of the radio. Operators want the longest reach, the highest data rate, and the smallest size, so the equipment will easily fit on poles and buildings.”

FWA has become the most successful 5G application to use the mmWave bands from 24 to 44 GHz. The bandwidth at mmWave delivers the data rates expected by consumers, and FWA networks are much faster and less expensive to deploy than fiber. Operators adopting FWA can offer consumers competitive choices beyond traditional cable TV, generating a new source of revenue. In the U.S., the top three mobile operators — AT&T, T-Mobile, and Verizon — are offering FWA services, with the combined growth of FWA connections outpacing new cable internet subscriptions.

mmTron offers a portfolio of some 10 power amplifier MMICs covering the 5G, FWA, and satellite communications (Satcom) bands from 22 to 44 GHz. The output power of the portfolio ranges from ½ to 50 watts, all with high linearity to maximize data rates. Datasheets for all mmTron’s products are available on our website at mmTron.com/products.

New Product: Single-Chip Front-End Module Covers 24–30 GHz

Block diagram of the TMC252 with the text "Announcing a front-end RFIC for FWA. 5G, and Satcom. TMC252"

mmTron has developed its first single-chip front-end IC for mmWave communications. Covering 24 to 30 GHz, the TMC252 integrates a power amplifier (PA), low noise amplifier (LNA), and transmit-receive (T/R) switch on a single GaN IC that is available as a die or packaged in a 5 mm x 5 mm air-cavity QFN.

The TMC252 is well-suited for fixed wireless access, 5G infrastructure, point-to-point radio, and satellite communications (Satcom). Its broadband performance covers several FR2, radio, and Satcom bands.

Tx Performance

In transmit mode, at 27 GHz the TMC252 provides 38 dBm saturated output power, 37 dBm at 1 dB compression, and 42 dBm OIP3. At saturated output, the power-added efficiency (PAE) is 22%. Small-signal gain is 22 dB. Biased at 23 V on the drain and –3.8 V on the gate, the quiescent current is 590 mA.

TMC252 measured on-wafer output power with 18 dBm drive at 24, 27, and 30 GHz.
TMC252 Tx path measured on-wafer output power with 18 dBm drive at 24, 27, and 30 GHz.

Rx Performance

In receive mode, at 27 GHz the TMC252 provides 19 dB gain with 5 dB noise figure. The output power at 1 dB compression is 25 dBm and OIP3 is 29 dBm. The recommended drain bias is also 23 V, and the current drain is 60 mA with –4.5 V on the gate.

TMC252 receive path measured on-wafer noise figure from 23 to 31 GHz.
TMC252 receive path measured on-wafer noise figure from 23 to 31 GHz.

T/R Switching

The single pole, double throw GaN switch routes the transmit signal from the PA to a common port, typically connected to an antenna, or the receive signal from the common port to the LNA. It is switched with 0 or 23 V; no negative voltage is required to control the switch.

The TMC252 is available as a die (designated TMC252D) which measures 3 mm x 3 mm x 0.1 mm. It is also available packaged in a 5 mm x 5 mm air-cavity QFN.

The datasheet for the TMC252 may be downloaded here.

PA and Driver for FWA, 5G Infrastructure, and Satcom

To extend the reach of high data rate radios operating in the frequency bands between 24 and 30 GHz, mmTron has developed a linear power amplifier (PA) and companion driver, both fabricated with a high linearity, high reliability GaN process.

TMC254 24–30 GHz PA

Small-signal performance of the TMC254D measured on-wafer.

The TMC254 PA delivers 39 dBm saturated output power with 29.5% power-added efficiency (PAE). P1dB is 38 dBm and OIP3 is 44 dBm. Linear gain is 24 dB.

The 24 to 30 GHz bandwidth of the PA supports high data rate applications like fixed wireless access (FWA), 5G infrastructure, Satcom, and supporting test and measurement systems. The linearity of the PA enables system designers to extend the reach and/or the data rates of their radio links.

The TMC254 is typically biased with 28 V on the drain and –3.8 V on the gate, drawing 588 mA quiescent current.

The PA is available as a die (TMC254D) or packaged in a 5 mm x 5 mm air-cavity QFN (TMC254). The die size is 3.0 mm x 3.0 mm, and the IC’s thickness is 0.1 mm. Bond pad and backside metallization are Au-based to ensure compatibility with wire bonding and high conductivity epoxy or eutectic die attach.

Download the TMC254 data sheet here.

TMC248 22–30 GHz Driver

Small-signal performance of the TMC248D measured on-wafer.

The companion TMC248 driver amplifier covers 22 to 30 GHz and provides 20 dB small-signal gain, 27 dBm saturated output power, 26 dBm output at P1dB, and 30 dBm OIP3.

The output power of the TMC248 is more than sufficient to drive the TMC254 to its saturated output without degrading the linearity of the signal chain. The driver can also be used as the PA in lower power systems.

Like the PA, the driver is typically biased at 23 V on the drain and draws 60 mA quiescent current at –4.5 V gate bias.

Available as die (TMC248D), the size of the IC is 3.0 mm x 3.0 mm, and the IC’s thickness is 0.1 mm. Bond pad and backside metallization are Au-based.

Download the TMC248 data sheet here.