Product Features
- RF frequency 37 to 41 GHz
- Linear Gain: 23 dB
- Psat: 5 W (37 dBm)
- Package Size: X=6.0 mm, Y=6.0 mm
- GaN HEMT Process
- DC Power: 24 VDC, 400 mA
Application
- 5G Wireless
- SATCOM
- Military Radar, EW
Product Description
The TMC212 GaN HEMT Power amplifier is a three stage Single ended power MMIC, packaged in a 6x6x1.2 mm3 SMT, designed for use in 5G wireless, SATCOM and Military Radar and EW applications. The TMC212 is a 50-ohm matched design which eliminates the need for RF port matching. To ensure rugged and reliable operation and moisture protection, the TMC212 is designed for hi volume ROHS SMT attach methods.
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.