DC-26.5 GHz
Distributed High Power Amplifier
Product Features
  • DC to 26.5 GHz
  • Psat: 1 W
  • Linear Gain: 15 dB
  • Die Size: 3 mm length, 1.9 mm width, 0.1 mm thickness
  • DC Power: 10 V at 500 mA
  • Test Instrumentation
  • Electronic Warfare
  • Fiber Optics
  • Broadband Gain Block
Product Description
The TMC200 is a GaAs pHEMT power amplifier designed with a distributed amplifier topology. The broadband MMIC covers DC to 26.5 GHz and provides 1 W of saturated power and has 15 dB small-signal gain. The amplifier is matched to 50 Ω, eliminating the need for off-chip matching. Bias for the TMC200 is typically 10 V and 500 mA, and it can be biased as low as 8 V and 300 mA. Bond pad and backside metallization are Au-based, compatible with ribbon and wedge bonding and high conductivity epoxy and eutectic die attach processes.
Min Typ Max Units
Frequency DC 26.5 GHz
Gain 15 dB
P1dB 29 dBm
Psat 30 dBm
Noise Figure 3.5 dB
OIP3 (20 GHz) 39 dBm
Bias Voltage 10 V
Bias Current 500 mA
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.