DC-26.5 GHz
Distributed High Power Amplifier
Product Features
  • DC to 26.5 GHz
  • Psat: 1 W
  • Linear Gain: 15 dB
  • DC Power: 10 V at 500 mA
  • Die, SMT Packaged, or X-Microwave X-MWblock®️
  • Die Size: 3 mm length, 1.9 mm width, 0.1 mm thickness
  • Instrumentation
  • Electronic Warfare
  • Other Military and Space
Product Description

The TMC200 covers DC to 26.5 GHz with 1 W of saturated output power, 29 dBm P1dB, and 39 dBm OIP3. A GaAs pHEMT distributed amplifier design, it has 15 dB small-signal gain and is well matched to 50 Ω. Typical bias is 10 V and 500 mA, and it can be biased as low as 8 V and 300 mA with good performance.

Its broad bandwidth and high output power make the TMC200 well-suited for electronic warfare and instrumentation, as well as any system requiring broad frequency coverage.

The Au-based bond pad and backside metallization is compatible with industry-standard ribbon and wedge bonding and high conductivity epoxy and eutectic die attach methods.

The TMC200 is available from mmTron in die and surface-mount packaged formats and from X-Microwave as an X-MWblock®️.

Min Typ Max Units
Frequency DC 26.5 GHz
Gain 15 dB
P1dB 29 dBm
Psat 30 dBm
Noise Figure 3.5 dB
OIP3 at 20 GHz 39 dBm
Bias Voltage 10 V
Bias Current 500 mA
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.