DC-20 GHz
High Linearity Distributed Amplifier
Product Features
  • Frequency Range: DC to 20 GHz
  • OIP3: 34 dBm
  • Linear Gain: 17 dB
  • DC Power: 8 VDC, 180 mA
  • Die, SMT Packaged, or X-Microwave X-MWblock®️
  • Die Size: X = 3 mm, Y = 1.55 mm, Z = 0.1mm
  • Communications
  • Instrumentation
  • Fiber Optics
  • Military and Space
Product Description

The TMC163 GaAs pHEMT distributed amplifier is a broadband, ultra-high linearity MMIC, well-suited for use in radio communication, instrumentation, OC192 LN/MZ modulator driver, military, and space applications.

A 50 Ω design, the TMC163 provides 34 dBm OIP3 with 3 dB noise figure and 17 dB small-signal gain. Typical bias drain bias is 8 V at 180 mA, and it can be biased as low as 5 V and 140 mA with excellent performance.

Au-based bond pad and backside metallization is compatible with industry-standard ribbon and wedge bonding and high conductivity epoxy and eutectic die attach methods.

The TMC163 is available from mmTron in die and surface-mount packaged formats and from X-Microwave as an X-MWblock®️.

Min Typ Max Units
Frequency DC 20 GHz
Gain 17 dB
P1dB 26 dBm
Psat 27 dBm
Noise Figure 3 dB
OIP3 34 dBm
Bias Voltage 8 V
Bias Current 180 mA
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.