Product Features
- RF frequency: DC to 20 GHz
- Linear Gain: 19 dB
- Noise Figure: 2.5 dB
- Die Size: X=3.22 mm, Y=1.55 mm, Z=0.1mm
- DC Power: 8 VDC, 160 mA
Application
- Point-to-Point Radios and VSATs
- Test instrumentation
- Fiber Optics
- Military, EW, and Space
Product Description
The TMC162 GaAs PHEMT Distributed amplifier is a broadband low noise and high linearity device, designed for use in Radios, Test instrumentation, Military, OC192 LN/MZ Modulator Driver, EW and Space applications. The TMC162 is a 50-ohm matched design providing 2.5dB of noise figure, 19dB of gain and 31dBm of OIP3 and eliminates the need for RF port matching. The typical bias for TMC162 is 8V and 160mA but it can be biased to as low as 5V and 125mA with excellent performance. Both bond pad and backside metallization are Au-based that is compatible with ribbon and wedge bonding and high conductivity epoxy and eutectic die attach methods.
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.