DC to 180 GHz
InP Distributed Amplifier
Product Features
  • Frequency Range: DC to 180 GHz
  • Linear Gain: 10 dB
  • Noise Figure: 8.5 dB
  • P1dB: 13 dBm
  • Die Size: 1.04 mm long x 0.80 mm wide x 75 µm thick
  • DC Bias: 8 & 2 V, 60 mA
  • 6G
  • Test Instrumentation
  • Fiber Optics
  • Broadband or High Frequency Applications
Product Description

The TMC775 InP distributed amplifier is a broadband, high gain amplifier with a positive gain slope designed to compensate for passive circuit losses that increase with frequency. The amplifier's broad bandwidth, high frequency response, high gain and output power make it well-suited for 6G development programs, whether radio links or test instrumentation. It's also useful for high data rate electrooptical links.

The TMC775's Au-based bond pads and backside metallization are compatible with standard ribbon and wedge bonding and high conductivity epoxy and eutectic die attach processes.

Min Typ Max Units
Frequency DC 180 GHz
Gain 10 dB
Noise Figure 8.5 dB
P1dB 13 dBm
Input & Output Impedance 50
Bias Voltage 8 & 2 V
Bias Current 60 mA
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.