Product Features
- 17.3 to 21.2 GHz Frequency Range
- 1.1 W Output at 35% PAE and 13 dB NPR
- 31 dBm P1dB
- Bias: 18 V at 74 mA
- High Reliability GaN HEMT Process
Application
- K-Band Satellite Downlink
Product Description
The TMC261 is a three-stage GaN power amplifier developed for the downlink band in LEO satellites, designed to provide the optimal output power, efficiency, and linearity. Fabricated with a high reliability GaN process, the MMIC die measures 3.5 mm x 2.5 mm and is 0.1 mm thick. It is also offered in a 6 mm x 6 mm air-cavity QFN. The nominal drain bias is 18 V at 74 mA. The drain bias can be increased to 24 V to increase the output power to 2 watts while maintaining good efficiency and NPR.
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.