Product Features
- RF frequency: 25 to 29 GHz
- Linear Gain: 17 dB
- Psat: 25 W
- Die Size: X=5.0 mm, Y=5.0 mm
- 0.15um GaN HEMT Process
- 4 mil SiC substrate
- DC Power: 18 VDC, 1.3 A
Application
- 5G Wireless
- SATCOM
- Military Radar, EW
Product Description
| Min | Typ | Max | Units | |
|---|---|---|---|---|
| Frequency | 25 | 29 | GHz | |
| Gain | 17 | dB | ||
| Return Loss | 10 | dB | ||
| Psat | 44 | dBm | ||
| PAE | 28 | % | ||
| Bias Voltage | 18 | V | ||
| Bias Current | 1300 | mA |
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.