Product Features
- RF frequency: 26 to 29.5 GHz
- Linear Gain: 17 dB
- Psat: 50 W
- Die Size: X=5.0 mm, Y=5.0 mm
- GaN HEMT Process
- 4 mil SiC substrate
- DC Power: 28 VDC, 1.7 A
Application
- Extended Range 5G Wireless
- SATCOM
- Military Radar, EW
Product Description
The TMC211 GaN HEMT Power amplifier is a 50W two stage Single ended power MMIC, designed for use in SATCOM, Extended Range 5G Wireless and Military Radar and EW applications. The TMC211 is a 50 W matched design which eliminates the need for RF port matching. To ensure rugged and reliable operation and moisture protection, the TMC211 is designed and layed out to lower the maximum junction temperature. Both bond pad and backside metallization are Au based that is compatible with ribbon and wedge bonding and high conductivity epoxy and eutectic die attach methods.
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.