Product Features
- RF frequency: DC to 20 GHz
- Linear Gain: 17 dB
- Noise Figure: 2.5 dB
- Die Size: X=3 mm, Y=1.55 mm, Z=0.1mm
- DC Power: 8 VDC, 125 mA
Application
- Point-to-Point Radios and VSATs
- Test instrumentation
- Fiber Optics
- Military, EW, and Space
Product Description
The TMC163 GaAs PHEMT Distributed amplifier is a broadband High Linearity device, designed for use in Radios, Test instrumentation, Military, EW, and Space applications. The TMC163 is a 50 W matched design providing 34dBm of OIP3 and eliminating the need for RF port matching. Both bond pad and backside metallization are Au-based that are compatible with ribbon and wedge bonding and high conductivity epoxy and eutectic die attach methods.
| Min | Typ | Max | Units | |
|---|---|---|---|---|
| Frequency | DC | 20 | GHz | |
| Gain | 17 | dB | ||
| P1dB | 26 | dBm | ||
| Psat | 27 | dBm | ||
| Noise Figure | 3 | dB | ||
| OIP3 | 34 | dBm | ||
| Bias Voltage | 8 | V | ||
| Bias Current | 180 | mA |
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.