Product Features
- Frequency Range: DC to 20 GHz
- Linear Gain: 19 dB
- Noise Figure: 2.5 dB
- DC Power: 8 VDC, 160 mA
- Die, SMT Packaged, or X-Microwave X-MWblock®️
- Die Size: X = 3.22 mm, Y = 1.55 mm, Z = 0.1mm
Application
- Radio Communications
- Instrumentation
- Fiber Optics
- Military and Space
Product Description
The TMC162 GaAs pHEMT distributed amplifier is a broadband, low noise, and high linearity MMIC, well-suited for use in radio communications, instrumentation, OC192 LN/MZ modulator driver, military, and space applications.
A 50 Ω design, the TMC162 provides 2.5 dB noise figure, 19 dB gain and 31 dBm OIP3. Typical drain bias is 8 V and 160 mA, and it can be biased as low as 5 V and 125 mA with excellent performance.
Au-based bond pad and backside metallization is compatible with industry-standard ribbon and wedge bonding and high conductivity epoxy and eutectic die attach methods.
The TMC162 is available from mmTron in die and surface-mount packaged formats and from X-Microwave as an X-MWblock®️.
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.