Product Features
- RF frequency: 22 to 26 GHz
- Linear Gain: 23 dB
- Psat: 10 W
- Die Size: X=3.5 mm, Y=2.5 mm, Z=0.1mm
- DC Power: 23 VDC, 450 mA
Application
- mmWave 5G
- Point-to-Point Radios and VSATs
- Fiber Optics
- Military, EW and Space
Product Description
The TMC152 GaN Power amplifier is a high linearity device, designed for use in mmWave 5G, Radios, Military, EW and Space applications. The TMC152 is a 50 W matched design providing 10W of saturated power from 22 to 26 GHz and eliminates the need for RF port matching. Both bond pad and backside metallization are Au-based that is compatible with ribbon and wedge bonding and high conductivity epoxy and eutectic die attach methods.
| Min | Typ | Max | Units | |
|---|---|---|---|---|
| Freq | 22 | 26 | GHz | |
| Gain | 23 | dB | ||
| P1dB | 38 | dBm | ||
| Psat | 40 | dBm | ||
| Noise Figure | 7 | dB | ||
| OIP3 | 49 | dBm | ||
| Bias Voltage | 23 | V | ||
| Bias Current | 450 | mA |
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.