Product Features
- RF frequency: DC to 75 GHz
- Linear Gain: 17 dB
- Noise Figure: 7 dB
- Die Size: X=2.6 mm, Y=1.45 mm, Z=0.05mm
- DC Power: 5 VDC, 270 mA
Application
- Point-to-Point Radios and VSATs
- Test instrumentation
- Fiber Optics
- Military, EW, and Space
Product Description
The TMC655 GaAs PHEMT Distributed amplifier is a broadband high gain device with positive gain slope, designed for use in Radios, Test instrumentation, Military, EW and Space applications. The TMC655 is a 50 W matched design providing 7dB of noise figure, offers excellent return loss at low end for optical instrumentation, interface to photodiodes, and eliminates the need for RF port matching. Both bond pad and backside metallization are Au based that is compatible with ribbon and wedge bonding and high conductivity epoxy and eutectic die attach methods.
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.