Product Features
- RF Frequency: 26.5 to 31.5 GHz
- Linear Gain: 25 dB
- Psat: 38 dBm
- Package: 6.0 mm x 6.0 mm QFN
- GaN HEMT Process
- DC Power: 24 VDC @ 500 mA
Application
- 5G Wireless
- Satcom
- Instrumentation
Product Description
The TMC253 GaN HEMT power amplifier is a three-stage, single-ended MMIC designed for high linearity 5G wireless, Satcom, instrumentation, and other applications in the 26.5–31.5 GHz band. The TMC253 is matched to 50 Ω, which eliminates the need for matching at the input and output. The MMIC is assembled in a 6 mm x 6 mm x 1.2 mm surface-mount package to support high-volume assembly processes.
Preliminary Information: The data contained in this document describes new products in the sampling or preproduction phase of development and is for information only. mmTron reserves the right to change without notice the characteristic data and other specifications as they apply to this product.